Mohit D Ganeriwala

Mohit D. Ganeriwala

Email: mohitdg[AT]iitk.ac.in

Office Phone: 0512-259-2622

Assistant Professor, Department of Electrical Engineering

Research Interests

Multiscale-Atomistic, Numerical and Compact Modeling, TCAD, Electrical characterization, Neuromorphic Computing, Two-dimensional Materials and Advanced nanoscale FETs

Education

PhD, Electrical Engineering Gujarat, India
INDIAN INSTITUTE OF TECHNOLOGY GANDHINAGAR July 2015 - July 2020
MTech, Electrical Engineering Gujarat, India
INDIAN INSTITUTE OF TECHNOLOGY GANDHINAGAR July 2013 - July 2015
BTech, Electronics and Communication Gujarat, India
INSTITUTE OF TECHNOLOGY, NIRMA UNIVERSITY August 2008 - August 2012

Website(s)

Homepage

CV

+ - Selected Publications Click to collapse

Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas, Juan J. Palacios, Francisco G. Ruiz, Andres Godoy, and Enrique G. Marin. ”Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches.” Nanoscale (2025).
M. D. Ganeriwala, Alejandro Toral-L ́opez, Estela Calaforra-Ayuso, Francisco Pasadas, Francisco G. Ruiz, Enrique G. Marin, Andres Godoy. “Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors”, ACS Applied Nano Materials 2024, 7 (21), 24857-24865.
S. Cruces, Mohit D. Ganeriwala, J. Lee, L. Völkel, D. Braun, A. Grundmann, K. Ran, E. González Marín, H. Kalisch, M. Heuken, A. Vescan, J. Mayer, A. Godoy, A. Daus, and M. C. Lemme. ”Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications”, Small Sci., 5: 2400523, (2024).
M. D. Ganeriwala, Aishwarya Singh, Abhilash Dubey, Ramandeep Kaur, and Nihar R. Mohapatra. “A bottom-up scalable compact model for quantum confined nanosheet FETs.” EEE Transactions on Electron Devices 2021, 69 (1), 380- 387.
Prabhat Khedgarkar, M. D. Ganeriwala, and Pardeep Duhan. “Investigation of the origin of 1/f noise in advanced 22 nm FDSOI MOSFETs”, Appl. Phys. Lett. 2024, 125 (20), 203506.
M. D. Ganeriwala, Francisco G. Ruiz, Enrique G. Marin, Nihar R. Mohapatra, “A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors”, IEEE Transactions on Electro Devices 2019, 66 (1), 73.
M.D. Ganeriwala, R. Motos-Espada, E.G. Marin, Juan Cuesta-Lopez, M.G. Palomo, Noel Rodríguez, F. Ruiz and A. Godoy, “A flexible laser induced graphene memristor with volatile switching for neuromorphic applications” ACS Applied Materials & Interfaces 2024, 16 (37), 49724-49732

+ - Professional Experience Click to collapse

Assistant Professor India
DEPARTMENT OF ELECTRICAL ENGINEERING,INDIAN INSTITUTE OF TECHNOLOGY KANPUR 2025-present
Postdoctoral Researcher Granada, Spain
DEPARTMENT OF ELECTRONICS AND COMPUTER TECHNOLOGY, UNIVERSITY OF GRANADA 2022-2025 Marie Skłodowska-Curie Actions (MSCA) - Fellow
Principal Engineer Bengaluru, India
GLOBALFOUNDRIES (https://www.globalfoundries.com) 2020-2022

+ - Contact Information Click to collapse

Office

Office: 202, ACES Building
Department of Electrical Engineering (ACES building).
Indian Institute of Technology Kanpur- 208016
UP.India

Office Phone: 0512-259-2622 (O)

Email: mohitdg[AT]iitk.ac.in