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Shafi Qureshi

Ph.D (University of California)

Professor Departement of Electrical Engineering


Research Interest



  • Ph.D.: Nuclear Engineering, University of California,
    Berkeley, 1991
  • M.S.: in Nuclear Engineering, University of California ,
    Berkeley, 1986
  • B.E.: Electrical Engineering, NIT Srinagar, 1974




  • S. Choudhary and S. Qureshi, "Theoretical study on transport properties of a BN co-doped SiC nano-tube," (2011) Physics Letters A, 375(38), pp. 3382-3385, Scopus citations: 11.
  • S. A. Loan, S. Qureshi, and S. S. K. Iyer, "A novel partial-ground-plane-based MOSFET on selective buried oxide: 2-D simulation study," (2010) IEEE transaction on electron devices, 57(3), pp 671-680, Scopus citations: 13
  • S. Qureshi and M. J. Siddiqui "A DC charge sheet turn-on model for the I-V characteristics of doped polysilicon thin film transistors," (2003) SemiconductorScience and Technology, 17 (6) pp. 526-533, Scopus citations: 9
  • M. J. Siddiqui and S. Qureshi, "Surface-potential-based charge sheet model for the polysilicon thin film transistor without considering kink effect," (2001) Microelectronics Journal 32(3), pp. 235-240, Scopus citations: 11
  • M. J. Siddiqui and S. Qureshi, "Empirical model for leakage current in polysilicon thin film transistor," (2000) Solid State Electronics, 44(11), pp 2015-2019, Scopus citations: 8

  • Editor of STM Journal of VLSI Design Tools and Technology
  • Reviewer of papers for IEEE Transaction on Solid State Devices
  • Senior Member, IEEE
  • Fellow, IETE
  • Fellow, Indian Association of Radiological Protection (IARP)

Department of Electrical Engineering,
Indian Institute of Technology, Kanpur
UP, India-208016

Office Phone: 0512-2597133 (O) / +91-512-2590063 (R)



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