• P. K. Sharma and N. Nallam, "Breaking the Performance Tradeoffs in N-Path Mixer-First Receivers Using a Second- Order Baseband Noise-Canceling TIA," in IEEE Journal of Solid-State Circuits, vol. 55, no. 11, pp. 3009-3023, Nov. 2020, doi: 10.1109/JSSC.2020.3005776.

• K. Badiyari and N. Nallam, "Exploiting MOS Parametric Amplification to Suppress Noise in Switched-Capacitor RF Receivers," in IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 12, pp. 5347-5358, Dec. 2020, doi: 10.1109/TMTT.2020.3017752.

• G. D. Singh and N. Nallam, "An RF Choke-Less Class E Power Amplifier," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 11, pp. 2422-2426, Nov. 2020, doi: 10.1109/TCSII.2020.2966552.

• K. Badiyari, N. Nallam and S. Chatterjee, "An N-Path Band-Pass Filter With Parametric Gain-Boosting," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, no. 10, pp. 3700-3712, Oct. 2019, doi: 10.1109/TCSI.2019.2918699.

• P. K. Sharma and N. Nallam, "A 0.1-0.95 GHz Full-Duplex Receiver With < 1 dB NF Degradation Using a Passive Continuous-Mode Charge-Sharing Vector Modulator," in IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 7, pp. 3042-3052, July 2019, doi: 10.1109/TMTT.2019.2900612.

• Principal RFIC/Analog Design Engineer, Hanwha Phasor Ltd., UK (2023-25)

• Staff Engineer, Qualcomm, Bangalore (2021-23)

• Assistant Professor, IIT Guwahati (2014-2021)

• Sr. R&D Engineer, Synopsys, Hyderabad (2013-14)

Office

226, ACES Building
Department of Electrical Engineering (ACES building)
Indian Institute of Technology Kanpur- 208016
UP. India

Office Phone: 0512-259-xxxx (O)

Email: nallam[AT]iitk.ac.in