Hfo2-Based Ferroelectrics for Low Power Memory Application

Hfo2-Based Ferroelectrics for Low Power Memory Application (Prof. Shikhar Mishra, Materials Science and Engineering)

This study aims to investigate the effect of thickness on Ec in CMOS-compatible FE HfO2 and HZO thin films, considering strain and surface energy effects. The project will leverage strain engineering, interface engineering, elemental doping, and phase composition variation to achieve thin films with low Ec, high Pr, high endurance, and low thickness. This research contributes to the development of low-power ferroelectric memory devices by advancing our understanding of thin film ferroelectric properties and facilitating the design of innovative materials and devices for future data storage applications.