Admissions

Modified on April 28, 2017
 

The Department of Electrical Engineering offers PhD, MS by Research (MS (R)) and M.Tech admission with specialization in the area of Microelectronics and MVLSI, Power Engineering, RF and Microwaves, Signal Processing, Communication and Networks, Control and Automation, and Photonics.

 

Please note that Department of Electrical Engineering is admitting students for all specializations in PhD, MS by Research and MTech in 2017-18, Semester I.

 

Important Announcements

Shortlisting Criteria for PhD Programme

List of candidates shortlisted for interview / written test to PhD programme

Shortlisting Criteria for MSR Programme

List of candidates shortlisted for interview / written test to MSR programme

Shortlisting Criteria for M.Tech Programme

List of candidates shortlisted for interview / written test to M.Tech programme

 

 

Important Dates

Programme

Interview Date

PhD

May 8-9, 2017

MS by Research

May 5-6, 2017

M.Tech

May 5-6, 2017

 

Selection Information

Admissions to PhD Program

All candidates shortlisted for interview / written test to PhD programme must report at interview venue on 8th May, 2017 @8.00 am

(a) MVLSI: Microelectronics and MVLSI stream will have a written test of 2 hour duration, followed by interview of shortlistedcandidates. The written test will be on the 8th May from 9.00AM. Candidates are requested to report at the interview venue as per the call letter and they will be directed to the written test venue. The syllabus for written test.

For interview - candidates are expected to have good basic knowledge in the area of microelectronics including basics of semiconductor devices, analog/digital circuits and VLSI (B.E/B.Tech/MSc level). They will also be tested on basic abilities in undergraduate level math and basic problem solving skills.


(b) Power, RF, SPCOM, Photonics, Controls: All these streams will admit students into PhD program based only on interview. No written component will be there for these streams.

 

Admissions to MS (R) / MTech Program

All candidates shortlisted for interview / written test to MS(R) / MTech programme must report at interview venue on 5th May, 2017 @8.00 am

(a) Power Engg.: The selection procedure will consist of a written component and an interview component. All candidates must appear both written and interview components to be eligible for selection. The written component will be on 5th May, 2017 @ 8.30 am. The venue will be communicated to you in your call letter. The syllabus for the written test.

(b) MVLSI, RF, SPCOM, Photonics, Controls: The selection will be based on only interview. There will be no written part for these streams.

 

Eligibility Criteria

Programme

Admission in 2017-2018/ I Semester

Admission in 2017-2018 / II semester

Eligibility Criteria

Ph.D.

YES

TBA

Master's degree in engineering with marks/CPI not below the specified minimum (As specified in clause 2.3.b of PG manual)

OR

a bachelor's degree in engineering or science (4 year program) with a minimum of 75 percent marks/7.5 CPI and a valid GATE score (the requirement of GATE score is waived for candidates with bachelor's degree in engineering from the centrally funded technical institutes (CFTIs)).

OR

a master's degree in science (Physics / Electronics) or an allied area while satisfying each of the following three criteria: (a) a minimum of 65 percent marks/6.5 CPI in the master's degree, (b) first division in bachelor's degree, and (c) JRF/95 percentile or higher in GATE score.

MS (R)

YES

TBA

The applicant must have a bachelor's degree in engineering or science (4 year program) with marks/CPI not below the specified minimum (As specified in clause 2.3.b of PG manual)

A valid GATE score is required for admission to the MS (Research) program in the case of regular candidates (non-sponsored/non-project candidates).

The requirement of GATE score is waived for the B.Tech candidates, graduated from IITs with a minimum overall CPI of 6.5 and a minimum CPI of 8.0 in the last two years in B.Tech.

M. Tech

YES

TBA

The applicant must have a bachelor's degree in engineering or science (4 year program) with marks/CPI not below the specified minimum (As specified in PG manual)

A valid GATE score is required for admission to the M. Tech program in the case of regular candidates (non-sponsored/non-project candidates).

The requirement of GATE score is waived for the B.Tech candidates, graduated from IITs with a minimum overall CPI of 6.5 and a minimum CPI of 8.0 in the last two years in B.Tech.

 

MSc (Physics) and MSc (Electronics) students are eligible to apply for MTech in photonics stream

 

GATE Subjects for admission to MTech Program

Code for Stream of specialization

GATE Subjects

Microelectronics and MVLSI (Code: 01)

EC

Power Engineering (Code: 02)

EE

RF and Microwaves (Code: 03)

EC

Signal Processing, Communications and Networks (Code: 04)

EC

Control and Automation (Code: 05)

EE, EC, IN

Photonics(Code: 06)

EC, EE, PH

 

Please note that cut-off GATE score for M.Tech shortlisting changes every year depending on applications received.

 

GATE Subjects for admission to MS (R) Program

Code for Stream of specialization

GATE Subjects

Microelectronics and MVLSI (Code: 01)

EC

Power Engineering (Code: 02)

EE

RF and Microwaves (Code: 03)

EC

Signal Processing, Communications and Networks (Code: 04)

EC

Control and Automation (Code: 05)

EE, EC, IN

Photonics(Code: 06)

EC, EE

 

Admission Process

  • Fill in the Online application

  • If shortlisted, attend interview and / or written test in the Department of Electrical Engineering.

  • Venue for interview / written test and details of accommodation would be provided along with the list of shortlisted candidates.

  • If you qualify the selection process, you will be offered admission to the programme.

  • Accept admission offer by paying the required fee.

To reach the department for interview / written test, please visit this link

 

Whom to contact:

For further queries, send an email to The convener DPGC- Prof. SK Mishra ( This email address is being protected from spambots. You need JavaScript enabled to view it. )

 

Academic Process:

Ph.D.: In the Ph.D. programme, a student with M.Tech qualification has to complete minimum of four courses and a student with B.Tech. qualification has to complete minimum of ten courses. The most important part of the doctoral programme is the research work leading to a thesis. Student works on exciting research problems to come up with innovative/original ideas.

MS(R): In MS(R) programme, a student has to complete a minimum of four courses in the area chosen by the student in consultation with the thesis advisor. After completing the course work, the student is expected to do research work leading to a thesis. Focus on research makes this program exciting and provides in-depth knowledge to the student.

M.Tech: In M. Tech programme, a student takes eight courses, some of which may be compulsory for the area of specialization chosen, the rest being electives to be chosen in consultation with programme advisors. The programme also includes research/project component, which culminates to a thesis.

 

Syllabus (MVLSI):

 

Section 1: Networks
Network solution methods: nodal and mesh analysis; Network theorems: superposition, Thevenin and Norton’s, maximum power transfer; Wye‐Delta transformation; Steady state sinusoidal analysis using phasors; Time domain analysis of simple linear circuits; Frequency domain analysis of RLC circuits;.

 

Section 2: Electronic Devices
Basic Semiconductor Physics – Crystal Structure, Band Diagram, Carrier Concentrations, Resistivity and Conductivity; Excess Carriers and Transport Processes - Recombination, Generation, Drift, and Diffusion; Junction Diodes - pn and metal-semiconductor; Bipolar Junction Transistors (BJTs); Metal-Oxide-Semiconductor Capacitors (MOSCAPs); and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).

 

Section 3: Analog Circuits
Small signal equivalent circuits of diodes, BJTs and MOSFETs; Simple diode circuits: clipping, clamping and rectifiers; Single-stage BJT and MOSFET amplifiers: biasing, bias stability, mid-frequency small signal analysis and frequency response; BJT and MOSFET amplifiers: multi-stage, differential, feedback, power and operational; Simple op-amp circuits;.

 

Section 4: Digital Circuits
logic gates and their static CMOS implementations.

 

Syllabus (Power Engineering): Network theory basics, DC and AC systems, Power system basics, DC-DC converters, Inverters, Rectifiers, DC and AC machines basics