Aim

VLSI design will soon use transistors whose size will be as small as 10nm. The aim of this short course is to educate and train bright minds on different aspects of Nano-transistors. Modeling especially compact modeling is the heart of circuit simulation. TCAD simulations are used for early device design and to understand the internal physics of transistor. Electrical characterization includes current and capacitance voltage measurement of transistor. RF measurement is an exciting area which involves understanding of devices as well as high frequency effects.
This short course will cover various topics in modeling, simulation and characterization of transistors especially at nanoscale.


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Short course Program

Target Audience

  • Faculty members
  • Practicing engineers
  • Students

Coordinators

Dr. Yogesh S. Chauhan Dept. of Electrical Engg., IIT Kanpur
and
Dr. Amit Agarwal Dept. of Physics, IIT Kanpur