HIGH POWER RF AMPLIFIERS FACILITY

The High Power RF Amplifiers (Model 100A250A) facility is present in Microwave Circuit Laboratory at Department of Electrical Engineering IIT Kanpur. The High Power RF Amplifiers 100A250A Amplifier is a self contained, broadband amplifier designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required. Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance without damage. The AR 100A250A Amplifier, when used with an RF sweep generator, will provide a maximum of 100 watts of swept power.

Specifications & Features:

Rated Output Power: 100 watts, Power Output @ 3dB compression (Nominal: 157 watts), Power Output @ 1dB compression (Nominal: 107 watts), Flatness: ± 1.5 dB maximum, Frequency Response: 10 kHz - 250 MHz instantaneously, Gain (at maximum setting): 50 dB minimum, Gain Adjustment (continuous range): 18 dB minimum, Input Impedance: 50 ohms, VSWR 1.5:1 maximum, Output Impedance: 50 ohms, VSWR 2.0:1 maximum. Modulation Capability: Will faithfully reproduce AM, FM, or pulse modulation appearing on the input signal, Remote Interfaces: IEEE-488, RS-232, RF Input: Type “N” female on front panel, RF Output: Type “N” female on front panel.

Location:

Microwave Circuit Laboratory, Department of Electrical Engineering,
IIT Kanpur

Contact:

Prof.Kumar Vaibhav Srivastava

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