The High Power RF Amplifiers (Model 100A250A) facility is present in Microwave Circuit Laboratory at Department of Electrical Engineering IIT Kanpur. The High Power RF Amplifiers 100A250A Amplifier is a self contained, broadband amplifier designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required. Utilization of push-pull MOSFET circuitry lowers distortion, improves stability and allows operation into any load impedance without damage. The AR 100A250A Amplifier, when used with an RF sweep generator, will provide a maximum of 100 watts of swept power.

Specifications & Features:

Rated Output Power: 100 watts, Power Output @ 3dB compression (Nominal: 157 watts), Power Output @ 1dB compression (Nominal: 107 watts), Flatness: ± 1.5 dB maximum, Frequency Response: 10 kHz - 250 MHz instantaneously, Gain (at maximum setting): 50 dB minimum, Gain Adjustment (continuous range): 18 dB minimum, Input Impedance: 50 ohms, VSWR 1.5:1 maximum, Output Impedance: 50 ohms, VSWR 2.0:1 maximum. Modulation Capability: Will faithfully reproduce AM, FM, or pulse modulation appearing on the input signal, Remote Interfaces: IEEE-488, RS-232, RF Input: Type “N” female on front panel, RF Output: Type “N” female on front panel.


Microwave Circuit Laboratory, Department of Electrical Engineering,
IIT Kanpur


Prof.Kumar Vaibhav Srivastava

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