An Improved Lateral Bipolar Junction Transistor (BJT) on selective Buried Oxide (selbox) and a Method for Manufacturing the same

Patent Status: 

Patent Filed

Indian Patent Applicaton No: 



Achieving improved device performance parameters in lateral BJT devices by choosing appropriate size and edge location of buried oxide under emitter and base of the transistor

Key Features: 

  • The lateral BJT performance parameters may be tuned by introducing SELBOX under the emitter and base.
  • By appropriate choice of the size of SELBOX, higher current gain and gain-bandwidth product can be obtained


  • Improved performance BJTs for high power applications
  • Improved performance BJTs in mixed signal ICs

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