BFPT Thin Films Heterostructures and Process Thereof

Patent Status: 

Patent Filed

Indian Patent Applicaton No: 

2842/DEL/2013

Date Filed: 

25.09.2013

Patent Category: 

Overview: 

This invention demonstrates the existence of very large ferroelectric polarization and dielectric constant in a polycrystallinefilm of 0.70BiFe03- 0.30PbTi03 through precise control of various process parameters during thin films growth.

Key Features: 

  • Ceremic bodies of this composition fragment on passing through the Curie point after sintering due to unusually large tetragonality.
  • Bulk ceramic specimens fragment show extremely high room temperature remnant polarization and dielectric constant.

Applications: 

  • Applications in industries engaged in fabricating high temperature ferroelectric/piezoelectric sensors and actuators.

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